ABSTRACT

Atomistic- and Meso-Scale Computational Simulations for Developing Multi-Timescale Theory for Radiation Degradation in Electronic and Optoelectronic Devices   [open pdf - 2MB]

"This project will support a research effort at the University of Michigan to simulate atomistic- and meso-scale behavior of defect evolutions in compound semiconductors, including ultrafast displacement cascade, intermediate defect stabilization and cluster formation, as well as slow defect reaction and migration. The fundamental mechanisms and knowledge gained from atomic- and meso-scale simulations will be input into rate-diffusion theory as initial conditions to calculate the steady-state distribution of point defects in a mesoscopic layered-structured system, thus allowing the development of a multi-timescale theory to study radiation degradation in electronic and optoelectronic devices. The long-term goal is developing a fundamental understanding of defects and defect processes in compound semiconductors, including defect/property relationships, the effects of defects on transport processes, the aggregation of defects to form complex nanostructures, and the development of predictive models of behavior."

Report Number:
AFRL-RV-PSTR-2016-0161
Author:
Publisher:
Date:
2017-02-13
Copyright:
University of Michigan. Approved for public release; distribution is unlimited.
Retrieved From:
Defense Technical Information Center (DTIC): http://www.dtic.mil/dtic/
Format:
pdf
Media Type:
application/pdf
URL:
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